Solubility limit and precipitate formation in Al-doped 4H-SiC epitaxial material
نویسندگان
چکیده
Heavily Al-doped 4H–SiC structures have been prepared by vapor phase epitaxy. Subsequent anneals have been carried out in an Ar atmosphere in a rf-heated furnace between 1500 °C and 2000 °C for 0.5 to 3 h. Secondary ion mass spectrometry has been utilized to obtain Al concentration versus depth as well as lateral distributions ~ion images!. Transmission electron microscopy ~TEM! has been employed to study the crystallinity and determine phase composition after heat treatment. A solubility limit of ;2310 Al/cm ~1900 °C! is extracted. Three-dimensional ion images show that the Al distribution does not remain homogeneous in layers heat treated at 1700 °C or above when the Al concentration exceeds 2310 cm. Al-containing precipitates are identified by energy-filtered TEM. © 2001 American Institute of Physics. @DOI: 10.1063/1.1402160#
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تاریخ انتشار 2001